Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal AnnealingCHYIU HYIA POON; SEE, Alex.IEEE transactions on semiconductor manufacturing. 2011, Vol 24, Num 2, pp 333-337, issn 0894-6507, 5 p.Article

Alternating Reversed Scanning Sequence for Improved Within-Wafer Uniformity During Nonmelt Laser Annealing of Arsenic-Implanted SiliconCHYIU HYIA POON; SEE, Alex; MEI SHENG ZHOU et al.IEEE transactions on semiconductor manufacturing. 2010, Vol 23, Num 2, pp 340-343, issn 0894-6507, 4 p.Article

Run-to-run process control for Chemical mechanical polishing in semiconductor manufacturingLI DA; VARADARAJAN GANESH KUMAR; TAY, Arthur et al.IEEE international symposium on intelligent control. 2002, pp 740-745, isbn 0-7803-7620-X, 6 p.Conference Paper

Effect of via etching process and postclean treatment on via electrical performanceCHIEW NYUK HO; YEOW KHENG LIM; GERALD, Higelin et al.Journal of electronic materials. 2001, Vol 30, Num 12, pp 1595-1601, issn 0361-5235Conference Paper

Deactivation Induced Within Wafer Nonuniformity During Nonmelt Laser Annealing of Arsenic and Phosphorus Implanted SiliconCHYIU HYIA POON; SEE, Alex; MEISHENG ZHOU et al.IEEE transactions on semiconductor manufacturing. 2009, Vol 22, Num 1, pp 175-179, issn 0894-6507, 5 p.Article

Matching poly layer ADI and AEI process windows by using ADI indexWENZHAN ZHOU; ZHENG ZOU; SEE, Alex et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61550I.1-61550I.6, issn 0277-786X, isbn 0-8194-6198-9, 1VolConference Paper

Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistorsONG, S. Y; CHOR, E. F; LEE, James et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 8, pp G485-G489, issn 0013-4651Article

Steep Retrograde Indium Channel profiling for high performance nMOSFETsdevice fabricationONG, S. Y; CHOR, E. F; LEUNG, Y. K et al.SPIE proceedings series. 2000, pp 270-278, isbn 0-8194-3900-2Conference Paper

Boron profile narrowing in laser-processed silicon after rapid thermal annealCHYIU HYIA POON; LENG SEOW TAN; BYUNG JIN CHO et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 1, pp G80-G83, issn 0013-4651Article

Dishing and nitride erosion of STI-CMP for different integration schemesLIM LIM HWEE; BALAKUMAR, S; MAHADEVAN, S et al.Journal of electronic materials. 2001, Vol 30, Num 12, pp 1478-1482, issn 0361-5235Conference Paper

Mask Error Enhancement Factor for sub 0.13μm lithographySIA KIM TAN; QUNYING LIN; QUAN, C et al.SPIE proceedings series. 2001, pp 879-887, isbn 0-8194-4032-9, 2VolConference Paper

Application of attenuated phase-shifting masks to sub-130nm lithographyKOO, Chee-Kiong; CHOO, Lay-Cheng; QUNYING LIN et al.SPIE proceedings series. 2001, pp 787-797, isbn 0-8194-4032-9, 2VolConference Paper

Advanced exposure and focus control by proximity profile signature matchingWENZHAN ZHOU; SEE, Alex; JIN YU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61550H.1-61550H.11, issn 0277-786X, isbn 0-8194-6198-9, 1VolConference Paper

Effects of low k film properties on electromigration performanceWEI LU; YEOW KHENG LIM; SEE, Alex et al.IEEE international reliability physics symposium. 2004, pp 621-622, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Steep retrograde indium channel profiling for high performance nMOSFETs device fabricationONG, S. Y; CHOR, E. F; LEUNG, Y. K et al.Microelectronics journal. 2002, Vol 33, Num 1-2, pp 55-60, issn 0959-8324Article

Latchup characterization of 0.18-micron STI cobalt silicided test structuresGOH, Wang-Ling; YEO, Kiat-Seng; LAZUARDI, Stephen et al.Microelectronics journal. 2001, Vol 32, Num 9, pp 725-731, issn 0959-8324Article

Effect of processing parameters on electroless Cu seed layer propertiesEE, Y. C; CHEN, Z; CHAN, L et al.Thin solid films. 2004, Vol 462-63, pp 197-201, issn 0040-6090, 5 p.Conference Paper